PART |
Description |
Maker |
MR27V3266D |
2M x16 / 1M x32 Synchronous OTP ROM
|
OKI[OKI electronic componets]
|
KBY00U00VA-B450 |
8Gb DDP (512M x16) NAND Flash 4Gb (64M x32 64M x32) 2/CS
|
Samsung semiconductor
|
42S16800A IS42S81600A IS42S16800A IS42S32400A IS42 |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM CABLE ASSEMBLY; BNC MALE TO BNC FEMALE BULKHEAD; 50 OHM, RG174A/U COAX; ; *USES STANDARD 50 OHM INTERFACE CONNECTORS* 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
|
Integrated Silicon Solution Inc Integrated Silicon Solution, Inc.
|
M58LW128B150N6T M58LW128B150N1T M58LW128A150N6E M5 |
8M X 16 FLASH 3V PROM, 150 ns, PDSO56 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories 128兆位Mb x16Mb的X32号,统一座,突发3V电源闪存 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories 128兆位8Mb x16Mb的X32号,统一座,突发3V电源闪存 RECEPTACLE HOUSING, 5WAY
|
ST Microelectronics STMicroelectronics N.V. 意法半导
|
M58LV064A150ZA1T M58LV064A150ZA6T M58LV064B150N1T |
64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories 64兆位4Mb的x16或功能的2Mb X32号,统一座,突发3V电源闪存
|
STMicroelectronics N.V.
|
AS7C3128K32P-3.5TQC AS7C3128K36P-3.5TQC AS7C3128K3 |
x36 Fast Synchronous SRAM x36快速同步SRAM x32 Fast Synchronous SRAM X32号,快速同步SRAM
|
Leoco, Corp. Vishay Semiconductors
|
IS61SF25616 IS61SF25616-10B IS61SF25616-10TQI IS61 |
x16 Fast Synchronous SRAM x16快速同步SRAM x18 Fast Synchronous SRAM 256K x 16, 256K x 18 SYNCHRONOUS FLOW-THROUGH STATIC RAM
|
HIROSE ELECTRIC Co., Ltd. ISSI[Integrated Silicon Solution, Inc]
|
K4S643232H K4S643232H-TC_L60 K4S643232H-TC60 K4S64 |
2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86 64Mb H-die (x32) SDRAM Specification 64芯片(X32号)内存规格
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
MT48LC64M4A203 |
SYNCHRONOUS DRAM 256Mb: x4, x8, x16 SDRAM
|
Micron Technology
|
MT48LC64M4A299 |
Synchronous DRAM 256Mb: x4, x8, x16 SDRAM
|
Micron Technology
|
MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的(x 8/x16)闪 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73 Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes CONN, M HEADER ST 1X2 .230 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|